三硒化鋯晶體（99.995%） ZrSe3 （Zirconium Triselenide）晶體尺寸：~8毫米電學性能：半導體晶體結(jié)構(gòu)：單斜晶系晶胞參數(shù)：a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90#176;, γ = 97.50#176;晶體類型：合成晶體純度：＞99.995%

三硒化鋯晶體（99.995%） ZrSe3 (Zirconium Triselenide)
晶體尺寸：~8毫米
電學性能：半導體
晶體結(jié)構(gòu)：單斜晶系
晶胞參數(shù)：a = 0.541 nm, b = 0.375 nm, c = 0.944 nm, α = γ = 90°, γ = 97.50°
晶體類型：合成

晶體純度：＞99.995%

X-ray diffraction on a ZrSe3 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 3, 4, 5, 6, 7, 8

Powder X-ray diffraction (XRD) of a single crystal ZrSe3. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Raman spectrum of a single crystal ZrSe3. Measurement was performed with a 785 nm Raman system at room temperature.