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semiconductor-type detectors are sensitive to the spectral region matched to the bandgap energy of the semiconductor. This means that detectors of different material types are sensitive to different wavelength regions. Use the shop by spectral region or detector material selections on the right-hａnd side of the screen to select the best detector for your application
Some detectors can be temperature controlled or require cryogenics such as liquid helium or liquid nitrogen in order to be operable.
Some detectors are photoconductors and require modulated light in order to detect a signal. These types of detectors are listed as AC coupled. Generally, for AC coupled detectors a lock-in amplifier (LIA) or demodulator are required before measurements can be performed.
單通道檢測器型號性能一覽表
Model |
Material |
Spectral Range, nm |
Special Features |
660-0001 | multialkaline photocathode | 185-900 | (PMT-01) Multialkaline High Sensitivity Photomultiplier Tube |
660-0002 | Ag-O-Cs photocathode | 400-1200 | PMT Tube, Hamamatsu R5108 |
660-0004 | multialkaline photocathode | 185-900 | PMT Tube, Hamamatsu R2949 |
660-0005 | low noise bialkali photocathode | 185-710 | PMT Tube, Hamamatsu R4220 |
660-0006 | GaAs (Cs) photocathode | 185-930 | PMT Tube, Hamamatsu R636-10 |
660-0007 | multialkaline photocathode | 185-850 | Photomultiplier Module, Photon Counting PMT, H8259-01 |
125-9010 | InP/InGaAsP photocathode | 950-1700 | Near InfraRed Photomultiplier Tube System (NIR-PMT) |
125-9018 | multialkaline photocathode | 125-900 | PMH-01-HR Photon Counting PMT Module |
525-4000 | UV Enhanced Si | 200-1100 | Mounted UV-Enhanced-Si Photodiode, Cathode Grounded |
525-4001 | Si | 350-1100 | Mounted Si Photodiode, Cathode Grounded |
525-4002 | UV Enhanced Si | 200-1100 | Mounted UV-enhanced Si Photodiode, Cathode Grounded |
525-4003 | Si | 350-1100 | Mounted Si Photodiode, Cathode Grounded |
525-4004 | Si | 350-1100 | High Speed Biased Si Photodetector |
525-4005 | UV Enhanced Si | 200-1100 | Amplified Enhanced-Si Photodetector diameter 1 mm |
525-4006 | Si | 350-1100 | Amplified Si Photodetector diameter 0.8 mm |
525-4007 | Si | 350-1100 | Amplified Si Photodetector 3.6x3.6 mm |
525-4008 | UV Enhanced Si | 200-1100 | Mounted UV-enhanced-Si Photodiode, Anode Grounded |
525-4009 | Si | 350-1100 | Mounted Silicon Photodiode, Anode Grounded |
525-4010 | Si | 350-1100 | Mounted Silicon Photodiode, Anode Grounded |
525-5001 | UV Enhanced Si | 200-1000 | (UVS-050-H) Detector, UV Silicon Photo Diode Receiver |
525-5003 | UV Enhanced Si | 200-1000 | (UVS-100-H) Detector, UV Silicon, 10mmX10mm |
525-5005 | UV enhanced Si | 200-1000 | (UVS-025-H) Detector, Si photodiode |
525-5007 | Si | 300-1000 | (S-100-H) Detector, Silicon Photo Diode Receiver |
525-5012 | Si | 300-1000 | (S-025-TE2-H) Detector, Si, TE-Cooled |
125-9007 | UV enhanced Si | 190-1100 | (SSIVT-REF) SSIVT Reference Detector |
526-0001 | Thermopile | 190-20,000 | (BBT-30) Broadbａnd Thermopile Detector - (1mW to 30W) |
526-0002 | Thermopile | 190-20,000 | (BBT-03) Broadbａnd Thermopile Detector - 3W |
590-0100 | Thermopile | 190-20,000 | Broadband Thermopile Detector - (1mW to 15W) |
525-5004 | Germanium | 800-1800 | (G-050-H) Detector, Germanium |
525-5018 | Germanium | 700-1800 | (G-100-H) Detector, Germanium - 10mm diameter |
525-5013 | Germanium | 800-1800 | (G-020-TE2-H) Detector, Ge, TE-Cooled, 2mm |
525-6005 | Germanium | 800-1500 | (G-050-E-LN6N) Detector, Germanium, Cryogenic Receiver |
525-5024 | InAs | 1000-3400 | (IA-020-TE2-H) Detector, 2mm TE cooled InAs, 1000-3400 nm |
525-5006 | InGaAs | 1,300-2,500 | (IGA2.2-010-TE2-H) Detector, InGaAs, TE-Cooled |
525-5008 | InGaAs | 1200-2600 | (IGA2.2-030-H) Detector |
525-5014 | InGaAs | 800-1700 | (IGA-010-H/3MHz) Detector |
525-5016 | Extended InGaAs | 1200-2600 | (IGA(2.2)-010-H/3MHz) Detector, InGaAs, Extended Range |
525-5017 | Extended InGaAs | 1300-2500 | (IGA(2.2)-010-TE2-H/3MHz ) Detector, InGaAs, Extended Range, TE Cooled |
525-5019 | InGaAs | 800-1700 | (IGA-010-H) Detector, InGaAs, 1mm round, |
526-6001 | MCT | 2,000-12,000+ | (MCT-10-010-E-LN) Detector - MCT Cryogenic Receiver, LN2 cooled - 1x1mm |
526-6002 | MCT | 2,000-15,000+ | (MCT-14-20-E-LN) Detector - MCT Cryogenic Receiver, LN2 cooled 2x2mm Square |
526-6003 | MCT | 2,000-12,000+ | (MCT-10-020-E-LN) Detector - MCT Cryogenic Receiver LN2 cooled, 2mm diameter |
526-6004 | MCT | 2,000-15,000+ | (MCT-14-10-LN) Detector - MCT Cryogenic Receiver LN2 cooled, 1x1mm Square |
526-6007 | MCT | 2,000-15,000+ | (MCT-20-20-E-LN6N) Detector - MCT Cryogenic Receiver LN2 cooled, 2x2mm Square |
525-5009 | PBS | 1,000-2,800 | (PBS-050-TE2-H) Detector, PBS |
126-0001 | Lithium Tantalate | 100nm -1 mm | (SCI420BJ-0) Pyroelectric Repetitive Pulse Energy Sensor |
126-0003 | Lithium Tantalate | 100nm -3 mm | (SCI425CMBO) Large Area Terahertz Detector |
126-0005 | Lithium Tantalate | 100nm -1 mm | (SCIEL400CMB) Widebａnd Pyroelectric Detector for FTIR Alignment |
126-9001 | Lithium Tantalate | 180nm -2,500nm | (SCI425CMA) Large Area Reference Detector |
125-9015 | Lithium Tantalate | 100nm -2,500 nm | (SCIEL420CM) Sciencetech TeraHertz Lithium Tantalate Pyroelectric Detector Head (100-150kV/W Sensitivity) |
126-0004 | DTGS | UV,VIS,NIR,MIR,FIR,THz | (SCIDTGS-PE) Low Noise DTGS TeraHertz Detector |
188-9008 | DTGS | UV,VIS,NIR,MIR,FIR,THz | SPS-300 DTGS Detector |
188-9012 | bolometer | 20um - 100um | Liquid Helium Cooled Bolometer (4.2K Version) |
188-9013 | bolometer | MIR,FIR,THz | Liquid Helium Cooled Bolometer (1.6K Version) |
188-9021 | InSb | 200um-5000um | Hot Electron Bolometer (HEB) |
525-6006 | InSb | 1000-5500 | Detector, InSb, Round, 4mm, Liquid Nitrogen Cooled |
526-0004 | Complex Structure | 190-20,000 | Power Meter, 4kW , Water Cooled, 100mm Aperture |
525-5011 | UV-Si/PbS | 1000-2600 | (UVS-PBS-025/020-H) Detector, Two Color UV Silicon PbS |
525-5021 | UV-Si/InAs | 200-3,500 | (UVS/IA-025/020-H) UV- Silicon / Indium Arsenide detector, 2mm active area, non-cooled |
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