二硫化鎢晶體 2H-WS2（Tungsten Disulfide）晶體結構：六邊形晶體尺寸：~10毫米電學性能：N型半導體晶體結構：六邊形晶胞參數：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120#176;晶體類型：合成晶體純度：＞99.995%

二硫化鎢晶體 2H-WS2(Tungsten Disulfide)
晶體結構：六邊形晶體尺寸：~10毫米
電學性能：N型半導體
晶體結構：六邊形
晶胞參數：a = b = 0.315 nm, c = 1.227 nm, α = β = 90, γ = 120°
晶體類型：合成
晶體純度：＞99.995%

X-ray diffraction on a single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10

Powder X-ray diffraction (XRD) of a single crystal 2H-WS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.

Stoichiometric analysis of a single crystal 2H-WS2 by Energy-dispersive X-ray spectroscopy (EDX).

Raman spectrum of a single crystal 2H-WS2. Measurement was performed with a 785 nm Raman system at room temperature.