Configuration
主要配置
| Evaporation Chamber 蒸發(fā)腔體 | 304 stainless steel chamber with viewport 蒸發(fā)腔體為304不銹鋼，并有觀(guān)察窗 |
| Vacuum Pumping 真空泵 | Cryo-pump or Turbo pump and dry rough pump 蒸發(fā)室配備分子泵和無(wú)油機(jī)械泵 |
| Vacuum Valve 真空閥門(mén) | Pneumatic UHV gate valves 氣動(dòng)控制超高真空插板閥 |
| Evaporation Source 蒸發(fā)源 | Multi pocket e-beam source 多坩堝電子束蒸發(fā)源 |
| Substrate Chamber 樣品室 | 304 stainless steel chamber with viewport 蒸發(fā)腔體為304不銹鋼，并有觀(guān)察窗 |
| Sample Stage 樣品臺(tái) | Side mount polar Substrate 側(cè)面安裝的轉(zhuǎn)角樣品臺(tái) |
| Film Control 膜厚檢測(cè) | Crystal Film thickness Monitor and Control 晶振膜厚監(jiān)控 |
| Vacuum Gauging 真空測(cè)量 | Wide range vacuum gauge and rough gauge 寬量程真空計(jì)用于測(cè)量真空和粗抽計(jì) |
Specification
主要技術(shù)指標(biāo)
| The Base Vacuum Pressure 極限真空度 | better than 9E-9 Torr 優(yōu)于9E-9托 |
| Sample Loading Capacity 裝樣能力 | One Max. 4 inch flat substrate 一個(gè)zui大4英寸的平板基片 |
| Rate Resolution 蒸發(fā)速率分辨率 | 0.05 Angstroms/sec |
| Thickness Resolution = 0.02 Angstroms 膜厚分辨率 | 0.02 Angstroms |
Features
特點(diǎn)
Unique Design of Substrate Chamber and Sources chamber isolated by UHV gate valve
*的結(jié)構(gòu)設(shè)計(jì)，基片腔體和蒸發(fā)源腔體通過(guò)UHV門(mén)閥隔開(kāi)
All Metal Seal, True UHV System
系統(tǒng)采用全金屬密封，真正的超高真空系統(tǒng)
Stand along system frameworks and electric rack
獨(dú)立的系統(tǒng)機(jī)架和電器柜
E-beam source Water Interlock
電子束蒸發(fā)源冷水安全互鎖
Optional Substrate Cooling
樣品臺(tái)可選水冷
Typical Application
典型應(yīng)用
For R&D Thin Film Deposition
用于薄膜沉積研發(fā)
Ideal tools for LIFT-OFF process
用于LIFT-OFF工藝的理想平臺(tái)
Ideal tools for GLAD process
用于GLAD工藝的理想平臺(tái)
Evaporate metal, Semiconductor or Insulation Materials （material depends）
可蒸發(fā)金屬，半導(dǎo)體或介質(zhì)材料（視具體材料而定）
Evaporate Magnetic Materials
可蒸發(fā)磁性材料
LOAD LOCK
預(yù)真空進(jìn)樣室（可選）
